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| 2SK1404 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features N N N N N Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 23 1. Gate 2. Drain 3. Source S 2SK1404 Absolute Maximum Ratings (Ta = 25GC) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW d 10 Ps, duty cycle d1% 2. Value at TC = 25qC Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Ratings 600 Unit V V A A A W r30 5 20 5 35 150 -55 to +150 qC qC 2 2SK1404 Electrical Characteristics (Ta = 25GC) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 600 Typ -- -- -- -- -- 1.1 5.0 1000 250 45 12 45 105 55 0.9 500 Max -- -- Unit V V Test conditions ID = 10 mA, VGS = 0 IG = r100 PA, VDS = 0 VGS = r25 V, VDS = 0 VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2.5 A, VGS = 10 V * ID = 2.5 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz 1 r30 -- -- 2.0 -- 3.0 -- -- -- -- -- -- -- -- -- r10 250 3.0 1.5 -- -- -- -- -- -- -- -- -- -- Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test PA PA V : S pF pF pF ns ns ns ns V ns 1 ID = 2.5 A, VGS = 10 V, RL = 12 : IF = 5 A, VGS = 0 IF = 5 A, VGS = 0, diF/dt = 100 A/Ps 3 2SK1404 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Maximum Safe Operation Area 50 30 ar ea Drain Current ID (A) 10 3 1 0.3 0.1 10 10 s O is per lim at ite ion d in by th R is (o n ) 40 0 DS 1 s PW D C m ) ot ) Sh C (1 25 s = m (T C 10 n = tio ra pe O s 20 Ta = 25C 0.05 0 50 100 Case Temperature TC (C) 150 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 10 10 V 8 6V 5V Pulse Test Typical Transfer Characteristics 10 VDS = 20 V Pulse Test 8 Drain Current ID (A) Drain Current ID (A) 6 4.5 V 6 4 4V VGS = 3 V 0 3.5 V 4 2 2 TC = 75C 25C -25C 10 30 40 20 50 Drain to Source Voltage VDS (V) 0 2 6 8 4 10 Gate to Source Voltage VGS (V) 4 2SK1404 Drain to Source Saturation Voltage VDS (on) (V) 10 Pulse Test 8 ID = 5 A Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 50 Pulse Test 20 10 5 2 1 15 V 0.5 0.2 0.5 10 1 2 5 Drain Current ID (A) 20 VGS = 10 V 6 4 2A 2 1A 0 8 20 4 12 16 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 5 VGS = 10 V Pulse Test 10 VDS = 20 V Pulse Test 5 2 1 0.5 0.2 0.1 0.05 75C -25C TC = 25C 4 3 ID = 5 A 2 1A 2A 1 0 -40 40 0 80 120 Case Temperature TC (C) 160 0.1 2 0.5 0.2 1 Drain Current ID (A) 5 5 2SK1404 Body to Drain Diode Reverse Recovery Time 1,000 Reverse Recovery Time trr (ns) 500 Capacitance C (pF) 1,000 10,000 VGS = 0 f = 1 MHz Ciss Typical Capacitance vs. Drain to Source Voltage 200 100 50 20 10 0.05 di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test 0.1 0.2 2 1 0.5 Reverse Drain Current IDR (A) 5 100 Coss Crss 10 0 20 50 10 30 40 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1,000 20 Switching Characteristics 500 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) . VGS = 10 V, VDD = 30 V . PW = 2 s, duty < 0.1% td (off) VDD = 100 V 250 V 400 V VGS Switching Time t (ns) 800 16 200 100 50 tr td (on) 10 5 0.1 tf 600 12 400 VDS ID = 5 A VDD = 400 V 250 V 100 V 8 20 200 4 0 0 8 24 32 16 Gate Charge Qg (nc) 40 0.2 2 5 0.5 1 Drain Current ID (A) 10 6 2SK1404 Reverse Drain Current vs. Source to Drain Voltage 10 Pulse Test 8 Reverse Drain Current IDR (A) 6 4 VGS = 5 V, 10 V 2 0, -5 V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 1.0 0.5 0.3 0.2 TC = 25C 0.1 0.1 0.05 ch-c (t) = S (t) * ch-c ch-c = 3.57C/W, TC = 25C PDM PW D = PW T 0.03 0.02 0.01 ulse P hot 1S 100 1m 10 m 100 m Pulse Width PW (s) T 0.01 10 1 10 Switching Time Test Circuit Vin Monitor Waveforms 90% Vout Monitor D.U.T. RL Vin 10 V 50 Vin Vout VDD . = 30 V . 10% 10% 10% 90% td (off) 90% td (on) tr tf 7 2SK1404 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 8 |
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